The Zener EffectWith the application of sufficient reverse voltage, a p-n junction will experience a rapid avalanche breakdown and conduct current in the reverse direction. Valence electrons which break free under the influence of the applied electric field can be accelerated enough that they can knock loose other electrons and the subsequent collisions quickly become an avalanche. When this process is taking place, very small changes in voltage can cause very large changes in current. The breakdown process depends upon the applied electric field, so by changing the thickness of the layer to which the voltage is applied, zener diodes can be formed which break down at voltages from about 4 volts to several hundred volts.
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Zener Diode
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Tunnel Diode CharacteristicIn 1957, Esaki, Kurose and Suzuki discovered that quantum mechanical tunneling of electrons could be achieved in a solid state diode. Josephson had discovered tunneling characteristics in the Josephson junction for superconductors. Esaki and Josephson shared the 1973 Nobel Prize for these discoveries.
For small forward bias, electrons tunnel across the depletion region from the P to the N side and fill states in the conduction band on the N-side. They align with hole states on the P-side. With increasing forward voltage, there is increasing misalignment and the current begins to drop with increasing forward voltage, producing a "negative resistance" behavior. For higher forward voltages, the junction begins to act like a normally forward biased diode, but the negative resistance regime was found to be very useful in producing oscillators. Tunnel diode oscillators were found to be very useful through the 1970s as high-frequency oscillators and found use in the space program. They have since been mostly replaced with a variety of other oscillator types.
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Index Semiconductor concepts Semiconductors for electronics Electronics concepts Tunnel diode, Wiki Floyd, Electronic Devices, Ch 3-5 | ||||
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