Laser action (with the resultant monochromatic and coherent light output) can be achieved in a p-n junction formed by two doped gallium arsenide layers. The two ends of the structure need to be optically flat and parallel with one end mirrored and one partially reflective. The length of the junction must be precisely related to the wavelength of the light to be emitted. The junction is forward biased and the recombination process produces light as in the LED (incoherent). Above a certain current threshold the photons moving parallel to the junction can stimulate emission and initiate laser action.
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