Junction Field Effect Transistor
Since the Gate junction is reverse biased and because there is no minority carrier contribution to the flow through the device, the input impedance is extremely high. The control element for the JFET comes from depletion of charge carriers from the n-channel. When the Gate is made more negative, it depletes the majority carriers from a larger depletion zone around the gate. This reduces the current flow for a given value of Source-to-Drain voltage. Modulating the Gate voltage modulates the current flow through the device. |
Index Electronics concepts Transistor varieties Reference Diefenderfer & Holton Sec 8-7 | ||||||
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IGFET
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Index Electronics concepts Transistor varieties Reference Diefenderfer & Holton p170ff | ||
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JFET Characteristic Curves
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Index Electronics concepts Transistor varieties Reference Diefenderfer & Holton p170ff | ||||
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Common Source JFET Amplifier
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Index Electronics concepts Transistor varieties Reference Diefenderfer & Holton Sec 8-8 | ||||
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